low k dielectrics pdf

PID ratio to control a. Furthermore, Vth cannot easily be reduced below about mV, because leakage currents due to increased oxide leakage that is, assuming high- dielectrics are not available and sub threshold conduction raise stand-by power consumption to unacceptable levels. The interface between Cu and the dielectric cap plays a critical role in the EM performance. In addition to affecting the speed of the microprocessor through the RC product, the capacitance affects directly the power used by the chip through the relation 2. The results discussed above show a considerable improvement in device reliability with the selective metal cap process.

55224 55225 55226 55227 55228